a p09t10gk-hf advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 100v lower gate chage r ds(on) 300m fast switching characteristic i d 2.4a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value units rthj-a 45 /w data and specifications subject to change without notice operating junction temperature range -55 to 150 20110824pre thermal data parameter 1 maximum thermal resistance, junction-ambient 3 storage temperature range continuous drain current, v gs @ 10v 1.9 pulsed drain current 1 10 total power dissipation 3 -55 to 150 2.78 + 20 preliminary continuous drain current, v gs @ 10v 2.4 gate-source voltage parameter rating drain-source voltage 100 the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on- resistance and cost-effectiveness. the sot-223 package is designed for suface mount application, large r heatsink than so-8 and sot package. d d s g sot-223
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =2a - - 300 m v gs =4.5v, i d =1a - - 450 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =2a - 3 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =2a - 8 - nc q gs gate-source charge v ds =80v - 1.5 - nc q gd gate-drain ("miller") charge v gs =10v - 2.5 - nc t d(on) turn-on delay time v ds =50v - 5 - ns t r rise time i d =2a - 12 - ns t d(off) turn-off delay time r g =3.3 -12- ns t f fall time v gs =10v - 3 - ns c iss input capacitance v gs =0v - 250 - pf c oss output capacitance v ds =25v - 50 - pf c rss reverse transfer capacitance f=1.0mhz - 30 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2a, v gs =0v - - 1.3 v t rr reverse recovery time i s =2a, v gs =0 v , - 25 - ns q rr reverse recovery charge di/dt=100a/s - 20 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 120 /w when mounted on min. copper pad. AP09T10GK-HF
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